MBR12030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Phases :

1

Max Reverse Voltage (DC) :

30V

Max Reverse Leakage Current :

1μA

HTS Code :

8541.10.00.80

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Max Surge Current :

800A

Terminal Form :

UNSPECIFIED

Termination :

Solder

Published :

2003

Packaging :

Bulk

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Peak Reverse Current :

1A

Orientation :

RIGHT ANGLE

Current - Average Rectified (Io) :

120A DC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Number of Elements :

2

Mount :

Chassis Mount, Through Hole

Element Configuration :

Common Anode

Number of Terminations :

2

Number of Pins :

2

Max Repetitive Reverse Voltage (Vrrm) :

30V

Diode Element Material :

SILICON

Operating Temperature - Junction :

-55°C~150°C

Number of Contacts :

6

ECCN Code :

EAR99

Min Operating Temperature :

-40°C

Factory Lead Time :

6 Weeks

Forward Current :

60A

Forward Voltage :

650mV

Diode Type :

Schottky

Current - Reverse Leakage @ Vr :

3mA @ 20V

Max Operating Temperature :

175°C

Diode Configuration :

1 Pair Common Anode

Contact Resistance :

20mOhm

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

Twin Tower

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Application :

Power

Pitch :

2mm

Average Rectified Current :

120A

Mounting Type :

Chassis Mount