MBR12030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Contact Resistance :

20mOhm

Element Configuration :

Common Anode

Min Operating Temperature :

-40°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Mounting Type :

Chassis Mount

Current - Average Rectified (Io) :

120A DC

Max Reverse Voltage (DC) :

30V

ECCN Code :

EAR99

Max Operating Temperature :

175°C

Factory Lead Time :

6 Weeks

Number of Contacts :

6

Diode Type :

Schottky

Number of Phases :

1

Package / Case :

Twin Tower

Operating Temperature - Junction :

-55°C~150°C

Average Rectified Current :

120A

Number of Elements :

2

Max Reverse Leakage Current :

1μA

Mount :

Chassis Mount, Through Hole

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Pitch :

2mm

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Diode Element Material :

SILICON

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Application :

Power

Number of Pins :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Reverse Leakage @ Vr :

3mA @ 20V

HTS Code :

8541.10.00.80

Peak Reverse Current :

1A

Max Surge Current :

800A

Number of Terminations :

2

Max Repetitive Reverse Voltage (Vrrm) :

30V

Forward Voltage :

650mV

Orientation :

RIGHT ANGLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Diode Configuration :

1 Pair Common Anode

Published :

2003

Forward Current :

60A

Termination :

Solder