MBR12030CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Contact Resistance :

20mOhm

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Mounting Type :

Chassis Mount

Min Operating Temperature :

-40°C

Max Reverse Leakage Current :

1μA

Average Rectified Current :

120A

Max Reverse Voltage (DC) :

30V

Package / Case :

Twin Tower

Termination :

Solder

Packaging :

Bulk

Element Configuration :

Common Cathode

Max Forward Surge Current (Ifsm) :

800A

Pitch :

2mm

Operating Temperature - Junction :

-55°C~150°C

Forward Voltage :

650mV

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Operating Temperature :

175°C

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Cathode

Current - Average Rectified (Io) :

120A DC

Mount :

Chassis Mount, Through Hole

Orientation :

RIGHT ANGLE

REACH SVHC :

No SVHC

Number of Elements :

2

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

30V

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

60A

Diode Element Material :

SILICON

Number of Contacts :

5

Number of Pins :

2

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Type :

Schottky

Number of Terminations :

2

Peak Reverse Current :

1A

Terminal Position :

UPPER

Number of Phases :

1

Max Surge Current :

800A

Application :

Power

Current - Reverse Leakage @ Vr :

3mA @ 20V

Published :

2012

Terminal Form :

UNSPECIFIED