MBR12020CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

ECCN Code :

EAR99

Max Reverse Leakage Current :

1μA

Current - Average Rectified (Io) :

120A DC

Factory Lead Time :

6 Weeks

Packaging :

Bulk

Pbfree Code :

yes

Current - Reverse Leakage @ Vr :

3mA @ 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Elements :

2

Voltage - Forward (Vf) (Max) @ If :

650mV @ 120A

Number of Terminations :

2

Mount :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Surge Current :

800A

Min Operating Temperature :

-40°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Mounting Type :

Chassis Mount

Application :

Power

Max Forward Surge Current (Ifsm) :

800A

Diode Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

20V

Diode Configuration :

1 Pair Common Anode

Operating Temperature - Junction :

-55°C~150°C

Peak Reverse Current :

1A

Element Configuration :

Common Anode

REACH SVHC :

No SVHC

Number of Phases :

1

Package / Case :

Twin Tower

Average Rectified Current :

120A

HTS Code :

8541.10.00.80

Max Reverse Voltage (DC) :

20V

Forward Voltage :

650mV

Max Operating Temperature :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Forward Current :

60A

Diode Type :

Schottky

Terminal Position :

UPPER

Number of Pins :

2