MBR12020CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Operating Temperature - Junction :

-55°C~150°C

Mounting Type :

Chassis Mount

Forward Voltage :

650mV

Diode Element Material :

SILICON

Max Operating Temperature :

175°C

Pbfree Code :

yes

Max Forward Surge Current (Ifsm) :

800A

Average Rectified Current :

120A

Diode Configuration :

1 Pair Common Anode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr :

3mA @ 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Voltage - Forward (Vf) (Max) @ If :

650mV @ 120A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Number of Elements :

2

Application :

Power

Max Reverse Leakage Current :

1μA

Min Operating Temperature :

-40°C

Published :

2012

Max Reverse Voltage (DC) :

20V

Mount :

Chassis Mount

REACH SVHC :

No SVHC

Number of Phases :

1

Factory Lead Time :

6 Weeks

Number of Pins :

2

Peak Reverse Current :

1A

Element Configuration :

Common Anode

Max Repetitive Reverse Voltage (Vrrm) :

20V

Number of Terminations :

2

HTS Code :

8541.10.00.80

Diode Type :

Schottky

Forward Current :

60A

Package / Case :

Twin Tower

Terminal Position :

UPPER

Max Surge Current :

800A

Current - Average Rectified (Io) :

120A DC

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99