MBR120100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Peak Reverse Current :

1A

Number of Phases :

1

Published :

2010

Max Operating Temperature :

175°C

Max Reverse Voltage (DC) :

100V

Mounting Type :

Chassis Mount

Application :

Power

Diode Type :

Schottky

Number of Terminations :

2

Current - Reverse Leakage @ Vr :

3mA @ 20V

Diode Element Material :

SILICON

Terminal Position :

UPPER

HTS Code :

8541.10.00.80

Output Current-Max :

60A

ECCN Code :

EAR99

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Cathode

RoHS Status :

RoHS Compliant

Max Surge Current :

800A

Terminal Form :

UNSPECIFIED

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

JESD-30 Code :

R-PUFM-X2

Packaging :

Bulk

Forward Current :

120A

Voltage - Forward (Vf) (Max) @ If :

840mV @ 60A

Current - Average Rectified (Io) :

120A DC

Factory Lead Time :

6 Weeks

Case Connection :

ANODE

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mount :

Chassis Mount

Max Reverse Leakage Current :

1μA

Package / Case :

Twin Tower

Average Rectified Current :

120A

Max Repetitive Reverse Voltage (Vrrm) :

100V