MBR1035CT

Manufacturer :

Taiwan Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Diode Configuration :

1 Pair Common Cathode

Width :

4.82mm

Number of Terminations :

3

Max Repetitive Reverse Voltage (Vrrm) :

35V

Application :

EFFICIENCY

Max Reverse Voltage (DC) :

35V

Peak Non-Repetitive Surge Current :

125A

Average Rectified Current :

10A

JESD-609 Code :

e3

Weight :

6.000006g

Number of Pins :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Diode Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Diode Type :

Schottky

Height :

8.89mm

JEDEC-95 Code :

TO-220AB

Voltage - Forward (Vf) (Max) @ If :

840mV @ 10A

Published :

2011

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Single

ECCN Code :

EAR99

Number of Phases :

1

Packaging :

Tube

Current - Reverse Leakage @ Vr :

100μA @ 35V

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Forward Current :

10A

Output Current-Max :

5A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Forward Voltage :

840mV

Mount :

Through Hole

Peak Reverse Current :

100μA

Operating Temperature - Junction :

-55°C~150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

HTS Code :

8541.10.00.80

Length :

10.4mm

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Additional Feature :

FREE WHEELING DIODE, LOW POWER LOSS

Element Configuration :

Common Cathode

Pbfree Code :

No

Package / Case :

TO-220-3

Max Forward Surge Current (Ifsm) :

125A