MBD770DWT1G

Manufacturer :

onsemi

Product Category :

Diodes - RF

Packaging :

Tape and Reel (TR)

Max Repetitive Reverse Voltage (Vrrm) :

70V

Width :

1.35mm

ECCN Code :

EAR99

Power Dissipation :

120mW

Peak Reverse Current :

200nA

Max Current Rating :

100mA

Frequency Band :

ULTRA HIGH FREQUENCY

Max Reverse Leakage Current :

200nA

Forward Voltage :

1V

Pbfree Code :

yes

Diode Type :

Schottky - 2 Independent

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Element Configuration :

Dual

Factory Lead Time :

2 Weeks

Halogen Free :

Halogen Free

Voltage - Rated DC :

70V

REACH SVHC :

No SVHC

Capacitance @ Vr, F :

1pF @ 20V 1MHz

Current Rating :

90mA

Published :

2009

Length :

2.2mm

Number of Terminations :

6

Base Part Number :

MBD770

Surface Mount :

yes

Forward Current :

100mA

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Forward Surge Current (Ifsm) :

1A

Diode Capacitance-Max :

1pF

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Diode Element Material :

SILICON

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

380mW

Height :

1mm

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Lead Free :

Lead Free