MB85R256FPF-G-BNDE1

Manufacturer :

Fujitsu Electronics America, Inc.

Product Category :

Memory

Memory Format :

FRAM

Package / Case :

28-SOIC (0.342, 8.69mm Width)

Min Operating Temperature :

-40°C

Qualification Status :

Not Qualified

Min Supply Voltage :

2.7V

Write Cycle Time - Word, Page :

150ns

Memory Density :

262144 bit

Supplier Device Package :

28-SOP

Terminal Pitch :

1.27 mm

Reach Compliance Code :

Unknown

Operating Mode :

ASYNCHRONOUS

Surface Mount :

yes

Supply Voltage-Min (Vsup) :

3 V

Package Shape :

RECTANGULAR

Operating Temperature :

-40°C~85°C TA

Mounting Type :

Surface Mount

Length :

17.75 mm

Terminal Position :

Dual

Seated Height-Max :

2.8 mm

Memory Width :

8

Memory Type :

Non-Volatile

Memory IC Type :

MEMORY CIRCUIT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Supply Voltage :

3.6V

Pin Count :

28

REACH SVHC :

Unknown

RoHS Status :

RoHS Compliant

Number of Words :

32768 words

JESD-30 Code :

R-PDSO-G28

Width :

8.6 mm

Published :

2006

Terminal Form :

Gull wing

Access Time :

150ns

Temperature Grade :

Industrial

Number of Terminals :

28

Number of Functions :

1

Voltage - Supply :

2.7V~3.6V

Manufacturer :

FUJITSU Semiconductor Limited

Interface :

Parallel

Packaging :

Tray

Max Operating Temperature :

85°C

Memory Size :

256Kb 32K x 8

Number of Pins :

28

Memory Interface :

Parallel

Factory Lead Time :

20 Weeks

HTS Code :

8542.32.00.71

Supply Voltage-Max (Vsup) :

3.6 V

Organization :

32KX8