M95512-DRMN6TP

Manufacturer :

STMicroelectronics

Product Category :

Memory

Memory Format :

EEPROM

Length :

4.9mm

Write Cycle Time-Max (tWC) :

5ms

Voltage - Supply :

1.8V~5.5V

Supply Voltage-Min (Vsup) :

1.8V

Data Retention Time-Min :

40

Write Cycle Time - Word, Page :

5ms

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

Not Qualified

Surface Mount :

yes

Write Protection :

HARDWARE/SOFTWARE

Standby Current-Max :

0.000005A

Clock Frequency :

16MHz

Supply Voltage-Max (Vsup) :

5.5V

Organization :

64KX8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

Operating Mode :

SYNCHRONOUS

Pbfree Code :

yes

Supply Current-Max :

0.008mA

Operating Temperature :

-40°C~85°C TA

Supply Voltage :

2.5V

Pin Count :

8

Terminal Pitch :

1.27mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Parallel/Serial :

Serial

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Memory Size :

512Kb 64K x 8

Width :

3.9mm

Packaging :

Tape and Reel (TR)

Base Part Number :

M95512

Memory Width :

8

Serial Bus Type :

SPI

Height Seated (Max) :

1.75mm

Memory Density :

524288 bit

JESD-30 Code :

R-PDSO-G8

Number of Functions :

1

Endurance :

1000000 Write/Erase Cycles

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Supplies :

2/5V

ECCN Code :

EAR99

HTS Code :

8542.32.00.51

Number of Terminations :

8

Memory Interface :

SPI