M29W800DT45ZE6E
- Mfr.Part #
- M29W800DT45ZE6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFBGA
- Datasheet
- Download
- Description
- IC FLASH 8MBIT PARALLEL 48TFBGA
- Stock
- 46,198
- In Stock :
- 46,198
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Width :
- 6mm
- HTS Code :
- 8542.32.00.51
- Packaging :
- Tray
- Peak Reflow Temperature (Cel) :
- 260
- Ready/Busy :
- yes
- Toggle Bit :
- yes
- Memory Format :
- Flash
- Pbfree Code :
- yes
- Pin Count :
- 48
- Package / Case :
- 48-TFBGA
- Organization :
- 512KX16
- Power Supplies :
- 3.3V
- Data Polling :
- yes
- Published :
- 2009
- Terminal Position :
- BOTTOM
- Sync/Async :
- ASYNCHRONOUS
- Length :
- 8mm
- Density :
- 8 Mb
- Boot Block :
- Top
- Memory Interface :
- Parallel
- Termination :
- SMD/SMT
- Memory Type :
- Non-Volatile
- Standby Current-Max :
- 0.0001A
- Memory Size :
- 8Mb 1M x 8 512K x 16
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Supply :
- 2.7V~3.6V
- Number of Pins :
- 48
- Operating Temperature :
- -40°C~85°C TA
- Command User Interface :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Write Cycle Time - Word, Page :
- 45ns
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Voltage :
- 2.7V
- Number of Terminations :
- 48
- Terminal Pitch :
- 0.8mm
- Common Flash Interface :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- Base Part Number :
- M29W800
- Sector Size :
- 16K8K32K64K
- Supply Voltage :
- 3.3V
- Additional Feature :
- TOP BOOT BLOCK
- RoHS Status :
- ROHS3 Compliant
- Number of Sectors/Size :
- 12115
- JESD-609 Code :
- e1
- Surface Mount :
- yes
- REACH SVHC :
- No SVHC
- Alternate Memory Width :
- 8
- Memory Width :
- 16
- Nominal Supply Current :
- 10mA
- Radiation Hardening :
- No
- Number of Functions :
- 1
- Access Time (Max) :
- 45 ns
- Height Seated (Max) :
- 1.2mm
- Datasheets
- M29W800DT45ZE6E
M29W800DT45ZE6E Documents

Memory Micron Technology M29W800DT45ZE6E Overview
Introducing the Memory Micron Technology M29W800DT45ZE6E, a high-performance IC FLASH 8MBIT PARALLEL 48TFBGA designed for demanding storage applications. Manufactured by Micron Technology, one of the leading innovators in memory and storage solutions, this product combines robust capacity and durability with a compact form factor. This component is ideal for applications requiring high-speed, reliable non-volatile memory. Its advanced technology ensures minimal power consumption while maintaining fast read and write speeds, making it a preferred choice for designers and engineers seeking superior performance in their memory solutions.
M29W800DT45ZE6E Features
The M29W800DT45ZE6E FLASH memory IC boasts several key features that make it stand out. It includes an 8 Mbit storage capacity, organized in a parallel interface for high-speed data access. The IC operates effectively within a temperature range of -40 to 85 degrees Celsius, ensuring reliability under extreme conditions. Additionally, its compact 48TFBGA (Thin Fine Ball Grid Array) package not only minimizes the space occupied on printed circuit boards but also enhances thermal performance and reduces electromagnetic interference, making it an excellent choice for tightly packed system designs.
M29W800DT45ZE6E Applications
- Consumer Electronics: Utilized in devices such as digital cameras, MP3 players, and gaming consoles where reliable and quick access to memory is crucial.
- Automotive Systems: Integrated in automotive electronics for navigation systems, infotainment, and advanced driver assistance systems (ADAS), requiring robust memory solutions that withstand extreme environmental conditions.
- Industrial Automation: Serves in control systems and machinery for data logging and real-time process control, where long-term reliability and data integrity are essential.
- Telecommunications: Used in network equipment such as routers and switches for firmware storage, facilitating fast boot-up times and efficient system updates.
- Medical Devices: Applied in medical monitoring equipment, where precision and the reliability of data storage can directly impact device performance and patient safety.
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