M29W800DT45N6E
- Mfr.Part #
- M29W800DT45N6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 8MBIT PARALLEL 48TSOP
- Stock
- 33,342
- In Stock :
- 33,342
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Voltage - Supply :
- 2.7V~3.6V
- Pin Count :
- 48
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Memory Type :
- Non-Volatile
- Data Polling :
- yes
- Operating Temperature :
- -40°C~85°C TA
- Toggle Bit :
- yes
- Additional Feature :
- TOP BOOT BLOCK
- Base Part Number :
- M29W800
- Mounting Type :
- Surface Mount
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Terminal Finish :
- MATTE TIN
- Width :
- 12mm
- Common Flash Interface :
- yes
- Pbfree Code :
- yes
- Memory Size :
- 8Mb 1M x 8 512K x 16
- Number of Terminations :
- 48
- Termination :
- SMD/SMT
- Terminal Pitch :
- 0.5mm
- Published :
- 2008
- Number of Pins :
- 48
- Packaging :
- Tray
- REACH SVHC :
- No SVHC
- Number of Sectors/Size :
- 12115
- Ready/Busy :
- yes
- Power Supplies :
- 3.3V
- Sector Size :
- 16K8K32K64K
- RoHS Status :
- ROHS3 Compliant
- Sync/Async :
- ASYNCHRONOUS
- Voltage :
- 2.7V
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Boot Block :
- Top
- Command User Interface :
- yes
- Access Time (Max) :
- 45 ns
- Radiation Hardening :
- No
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 16
- Supply Voltage :
- 3.3V
- Organization :
- 512KX16
- Memory Interface :
- Parallel
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Standby Current-Max :
- 0.0001A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Write Cycle Time - Word, Page :
- 45ns
- Memory Format :
- Flash
- Nominal Supply Current :
- 10mA
- HTS Code :
- 8542.32.00.51
- Length :
- 18.4mm
- Alternate Memory Width :
- 8
- Density :
- 8 Mb
- Datasheets
- M29W800DT45N6E

Memory Micron Technology M29W800DT45N6E Overview
The Memory Micron Technology M29W800DT45N6E is a high-performance 8 Mbit FLASH memory device designed by Micron Technology, optimized for a wide range of industrial and commercial applications. Packaged in a compact 48TSOP form, this integrated circuit offers a robust solution for systems requiring reliable, non-volatile memory. Its parallel interface facilitates fast data transfer rates, making it ideal for environments where speed and efficiency are crucial. This product is particularly suited for businesses looking to integrate large-scale memory solutions, with its durability and operational efficiency serving as key factors to support high-volume purchases.
M29W800DT45N6E Features
The M29W800DT45N6E FLASH memory chip boasts several key features that enhance its utility and performance in demanding applications. These include a large 8 Mbit storage capacity, parallel interface for higher data transfer speeds, and a standard 48TSOP package that is compatible with existing board layouts. This IC is also designed for low power consumption, contributing to greater energy efficiency in deployed systems.
M29W800DT45N6E Applications
- Embedded Systems: Utilized in microcontroller-based applications, this FLASH memory integrates seamlessly into the firmware of embedded systems, providing a reliable platform for firmware updates and data logging.
- Consumer Electronics: Ideal for use in devices such as digital cameras, gaming consoles, and smart TVs, where large, non-volatile memory banks are essential for user data storage and application performance.
- Automotive Electronics: Supports advanced automotive systems, including infotainment and navigation systems, which require durable and fast-access memory for real-time performance.
- Telecommunication: Applied in networking equipment like routers and switches, the M29W800DT45N6E facilitates firmware storage and management, ensuring robust operation and service continuity.
- Industrial Control Systems: Serves as a critical component in PLCs and other control equipment, offering the necessary memory capacity for complex algorithms and process data storage.
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