M29W800DB70N6E
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- Mfr.Part #
- M29W800DB70N6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 8MBIT PARALLEL 48TSOP
- Stock
- 10,296
- In Stock ：
- 10,296
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Pin Count :
- 48
- Common Flash Interface :
- yes
- Number of Functions :
- 1
- Standby Current-Max :
- 0.0001A
- Packaging :
- Tray
- Ready/Busy :
- yes
- Terminal Position :
- Dual
- Command User Interface :
- yes
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Published :
- 2008
- Data Polling :
- yes
- Height Seated (Max) :
- 1.2mm
- Number of Terminations :
- 48
- Additional Feature :
- BOTTOM BOOT BLOCK
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Width :
- 12mm
- Mounting Type :
- Surface Mount
- Toggle Bit :
- yes
- Density :
- 8 Mb
- Sync/Async :
- ASYNCHRONOUS
- Write Cycle Time - Word, Page :
- 70ns
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Surface Mount :
- yes
- Length :
- 18.4mm
- Memory Size :
- 8Mb 1M x 8 512K x 16
- Memory Format :
- Flash
- Base Part Number :
- M29W800
- Access Time (Max) :
- 70 ns
- Peak Reflow Temperature (Cel) :
- 260
- Sector Size :
- 16K8K32K64K
- Number of Sectors/Size :
- 12115
- Alternate Memory Width :
- 8
- Memory Width :
- 16
- Memory Interface :
- Parallel
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -40°C~85°C TA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- JESD-609 Code :
- e4
- Organization :
- 512KX16
- Pbfree Code :
- yes
- Voltage :
- 2.7V
- HTS Code :
- 8542.32.00.51
- Radiation Hardening :
- No
- Terminal Pitch :
- 0.5mm
- Power Supplies :
- 3/3.3V
- REACH SVHC :
- No SVHC
- Supply Voltage :
- 3V
- Nominal Supply Current :
- 10mA
- Voltage - Supply :
- 2.7V~3.6V
- Memory Type :
- Non-Volatile
- Boot Block :
- BOTTOM
- Number of Pins :
- 48
- Datasheets
- M29W800DB70N6E
Memory Micron Technology M29W800DB70N6E Overview
The Memory Micron Technology M29W800DB70N6E is a high-performance 8Mbit FLASH memory chip designed to meet the rigorous demands of modern electronic applications. Manufactured by Micron Technology, this IC leverages advanced parallel interface technology, housed in a compact 48TSOP package, offering enhanced durability and optimal integration for a wide range of applications. The robust design and reliability of the M29W800DB70N6E make it an ideal choice for developers and manufacturers looking to implement a memory solution that combines high speed with low power consumption, ensuring efficient operation across various platforms.
M29W800DB70N6E Features
This IC FLASH memory chip boasts several key features that make it stand out in the competitive electronics market. Notably, its 8Mbit storage capacity provides ample space for complex firmware storage and data logging tasks. The parallel interface ensures high-speed data transfer rates, which are essential for applications requiring quick read and write operations. Furthermore, its compatibility with the 48TSOP package allows for streamlined integration into existing designs, reducing development time and costs.
M29W800DB70N6E Applications
- Consumer Electronics: Used in devices such as set-top boxes and gaming consoles, where reliable and quick data storage is necessary for user settings and quick boot-up sequences.
- Automotive Electronics: Applied in automotive infotainment systems to store navigational data and multimedia content, enhancing the in-vehicle user experience.
- Industrial Automation: Utilized in PLCs (Programmable Logic Controllers) for storing executable code and configurations, crucial for process control and machinery automation.Telecommunication Equipment: Helps in storing firmware and operating system images for routers and switches, ensuring efficient network management and connectivity.
- Medical Devices: Integral in medical monitoring equipment, where precision and reliability in data logging are paramount for patient care and diagnostics.
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