M29W800DB45N6E

Manufacturer :

Micron Technology

Product Category :

Memory

Command User Interface :

yes

Memory Size :

8Mb 1M x 8 512K x 16

Length :

18.4mm

Pin Count :

48

Published :

2008

Memory Type :

Non-Volatile

Toggle Bit :

yes

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

ECCN Code :

EAR99

Data Polling :

yes

Memory Width :

16

Packaging :

Tray

Boot Block :

BOTTOM

Voltage :

2.7V

Voltage - Supply :

2.7V~3.6V

Sync/Async :

ASYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

0.5mm

Nominal Supply Current :

10mA

HTS Code :

8542.32.00.51

Sector Size :

16K8K32K64K

Radiation Hardening :

No

Write Cycle Time - Word, Page :

45ns

RoHS Status :

ROHS3 Compliant

Width :

12mm

Access Time (Max) :

45 ns

Number of Pins :

48

Organization :

512KX16

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

REACH SVHC :

No SVHC

Height Seated (Max) :

1.2mm

Supply Voltage :

3.3V

Terminal Finish :

MATTE TIN

Ready/Busy :

yes

Standby Current-Max :

0.0001A

Power Supplies :

3.3V

JESD-609 Code :

e3

Surface Mount :

yes

Base Part Number :

M29W800

Number of Terminations :

48

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Density :

8 Mb

Memory Format :

Flash

Common Flash Interface :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Sectors/Size :

12115

Number of Functions :

1

Pbfree Code :

yes

Alternate Memory Width :

8

Operating Temperature :

-40°C~85°C TA

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

BOTTOM BOOT BLOCK