M29W640GT90NA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage :

2.7V

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Supply Current :

10mA

Page Size :

4/8words

Ready/Busy :

yes

Memory Size :

64Mb 8M x 8 4M x 16

Organization :

4MX16

Pin Count :

48

Voltage - Supply :

2.7V~3.6V

Additional Feature :

TOP BOOT BLOCK

Sync/Async :

ASYNCHRONOUS

Number of Sectors/Size :

8127

Access Time (Max) :

90 ns

HTS Code :

8542.32.00.51

Radiation Hardening :

No

Number of Pins :

48

Density :

64 Mb

Memory Interface :

Parallel

Standby Current-Max :

0.0001A

Number of Terminations :

48

Write Cycle Time - Word, Page :

90ns

Toggle Bit :

yes

Terminal Pitch :

0.5mm

Command User Interface :

yes

Supply Voltage :

3V

Base Part Number :

M29W640

Terminal Finish :

MATTE TIN

Common Flash Interface :

yes

Height Seated (Max) :

1.2mm

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Surface Mount :

yes

Pbfree Code :

yes

Data Polling :

yes

Packaging :

Tray

Sector Size :

8K64K

Peak Reflow Temperature (Cel) :

260

Width :

12mm

ECCN Code :

3A991.B.1.A

Mounting Type :

Surface Mount

Memory Width :

16

Boot Block :

Top

Number of Functions :

1

Operating Temperature :

-40°C~85°C TA

Memory Format :

Flash

JESD-609 Code :

e3

Alternate Memory Width :

8

RoHS Status :

ROHS3 Compliant

Length :

18.4mm

Power Supplies :

3/3.3V

Memory Type :

Non-Volatile

Published :

2013

Terminal Position :

Dual