M29W640GH7ANB6E

Manufacturer :

Micron Technology

Product Category :

Memory

JESD-609 Code :

e3

Number of Sectors/Size :

128

Memory Size :

64Mb 8M x 8 4M x 16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Supply :

2.7V~3.6V

Pbfree Code :

yes

Page Size :

4/8words

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Number of Functions :

1

Standby Current-Max :

0.0001A

Power Supplies :

3/3.3V

Radiation Hardening :

No

Memory Format :

Flash

Sector Size :

64K

Memory Interface :

Parallel

Ready/Busy :

yes

Packaging :

Tray

Peak Reflow Temperature (Cel) :

260

Memory Width :

16

Common Flash Interface :

yes

Pin Count :

56

Number of Pins :

56

ECCN Code :

3A991.B.1.A

Command User Interface :

yes

Sync/Async :

ASYNCHRONOUS

Width :

14mm

Terminal Finish :

MATTE TIN

Terminal Pitch :

0.5mm

Alternate Memory Width :

8

Base Part Number :

M29W640

Published :

2015

Height Seated (Max) :

1.2mm

Nominal Supply Current :

10mA

Supply Voltage :

3V

HTS Code :

8542.32.00.51

Density :

64 Mb

Length :

18.4mm

RoHS Status :

ROHS3 Compliant

Access Time (Max) :

70 ns

Data Polling :

yes

Additional Feature :

BOTTOM BOOT BLOCK

Write Cycle Time - Word, Page :

70ns

Surface Mount :

yes

Number of Terminations :

56

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Organization :

4MX16

Operating Temperature :

-40°C~85°C TA

Toggle Bit :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Voltage :

2.7V