M29W640GH70ZS6E

Manufacturer :

Micron Technology

Product Category :

Memory

Voltage - Supply :

2.7V~3.6V

Terminal Finish :

TIN SILVER COPPER

Supply Current-Max :

0.02mA

Packaging :

Tray

Common Flash Interface :

yes

Data Polling :

yes

Pin Count :

64

Radiation Hardening :

No

Number of Pins :

64

Organization :

4MX16

Supply Voltage :

3V

Memory Width :

16

Number of Terminations :

64

Memory Format :

Flash

Width :

11mm

Ready/Busy :

yes

Density :

64 Mb

JESD-609 Code :

e1

Package / Case :

64-LBGA

Additional Feature :

BOTTOM BOOT BLOCK

Number of Sectors/Size :

128

HTS Code :

8542.32.00.51

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Published :

2015

Base Part Number :

M29W640

Alternate Memory Width :

8

Write Cycle Time - Word, Page :

70ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Pitch :

1mm

Terminal Position :

BOTTOM

Page Size :

4/8words

Toggle Bit :

yes

Height Seated (Max) :

1.4mm

Voltage :

2.7V

Mounting Type :

Surface Mount

Memory Size :

64Mb 8M x 8 4M x 16

Access Time (Max) :

70 ns

Surface Mount :

yes

Standby Current-Max :

0.0001A

Command User Interface :

yes

Memory Type :

Non-Volatile

Operating Temperature :

-40°C~85°C TA

ECCN Code :

3A991.B.1.A

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sector Size :

64K

Power Supplies :

3/3.3V

Length :

13mm