M29W640GH70NA6E

Manufacturer :

Micron Technology

Product Category :

Memory

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Density :

64 Mb

Command User Interface :

yes

Operating Temperature :

-40°C~85°C TA

Memory Width :

16

Number of Pins :

48

Surface Mount :

yes

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Number of Terminations :

48

Power Supplies :

3/3.3V

Packaging :

Tray

HTS Code :

8542.32.00.51

Data Polling :

yes

Pin Count :

48

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

3A991.B.1.A

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.5mm

JESD-609 Code :

e3

Length :

18.4mm

Memory Format :

Flash

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Organization :

4MX16

Memory Type :

Non-Volatile

Radiation Hardening :

No

Sector Size :

64K

Mounting Type :

Surface Mount

Access Time (Max) :

70 ns

Base Part Number :

M29W640

Alternate Memory Width :

8

Supply Voltage :

3V

Voltage - Supply :

2.7V~3.6V

Common Flash Interface :

yes

Number of Sectors/Size :

128

Contact Plating :

Tin

Memory Size :

64Mb 8M x 8 4M x 16

Pbfree Code :

yes

Additional Feature :

BOTTOM BOOT BLOCK

Write Cycle Time - Word, Page :

70ns

Number of Functions :

1

Ready/Busy :

yes

Voltage :

2.7V

Nominal Supply Current :

10mA

Page Size :

4/8words

Sync/Async :

ASYNCHRONOUS

Toggle Bit :

yes

Published :

2009

Standby Current-Max :

0.0001A

Width :

12mm