M29W640GB70NA6E
- Mfr.Part #
- M29W640GB70NA6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 64MBIT PARALLEL 48TSOP
- Stock
- 7,242
- In Stock :
- 7,242
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Boot Block :
- BOTTOM
- Memory Format :
- Flash
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Pitch :
- 0.5mm
- Voltage - Supply :
- 2.7V~3.6V
- Terminal Position :
- Dual
- Data Polling :
- yes
- Width :
- 12mm
- Pbfree Code :
- yes
- Alternate Memory Width :
- 8
- Radiation Hardening :
- No
- Access Time (Max) :
- 70 ns
- Standby Current-Max :
- 0.0001A
- ECCN Code :
- 3A991.B.1.A
- Memory Interface :
- Parallel
- Voltage :
- 2.7V
- Organization :
- 4MX16
- Number of Pins :
- 48
- Ready/Busy :
- yes
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Sector Size :
- 8K64K
- Number of Sectors/Size :
- 8127
- Packaging :
- Tray
- Number of Terminations :
- 48
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Length :
- 18.4mm
- Memory Width :
- 16
- Memory Size :
- 64Mb 8M x 8 4M x 16
- Sync/Async :
- ASYNCHRONOUS
- Density :
- 64 Mb
- JESD-609 Code :
- e4
- Toggle Bit :
- yes
- Page Size :
- 4/8words
- Surface Mount :
- yes
- Operating Temperature :
- -40°C~85°C TA
- Write Cycle Time - Word, Page :
- 70ns
- Power Supplies :
- 3/3.3V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- BOTTOM BOOT BLOCK
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Type :
- Non-Volatile
- Height Seated (Max) :
- 1.2mm
- Supply Voltage :
- 3V
- Pin Count :
- 48
- Base Part Number :
- M29W640
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Number of Functions :
- 1
- Published :
- 2009
- HTS Code :
- 8542.32.00.51
- Common Flash Interface :
- yes
- Nominal Supply Current :
- 10mA
- Command User Interface :
- yes
- Datasheets
- M29W640GB70NA6E

Memory Micron Technology M29W640GB70NA6E Overview
The Memory Micron Technology M29W640GB70NA6E is a high-performance 64Mbit flash memory device, encapsulated in a 48TSOP package, tailored for advanced, high-speed data storage solutions. Engineered by Micron Technology, a leader in memory and storage solutions, this IC (Integrated Circuit) FLASH memory component excels in delivering fast read and write capabilities, essential for modern electronic applications. The design ensures robust reliability and high-density data integrity, making it an ideal choice for manufacturers aiming to enhance their systems with efficient, durable memory solutions. The strategic integration of the Memory Micron Technology M29W640GB70NA6E into your products can propel system performance and stability, driving bulk purchases by B2B customers looking for top-tier memory components.
M29W640GB70NA6E Features
This 64Mbit FLASH memory device boasts a parallel interface that ensures high-speed data transactions, critical for applications requiring rapid access to stored information. Its 48TSOP package not only optimizes board space but also facilitates easier integration into a diverse range of electronic systems. Enhanced durability and a broad operating temperature range make the M29W640GB70NA6E a reliable choice for demanding environments.
M29W640GB70NA6E Applications
- Automotive Electronics: Utilized in engine control units, the M29W640GB70NA6E stores critical firmware that enhances vehicle performance and efficiency.
- Consumer Electronics: Applied in smart home devices, this memory chip manages firmware updates and user settings, improving device functionality and user experience.
- Communication Equipment: In telecom infrastructure, it supports the storage of network firmware and configurations, facilitating robust and scalable network operations.
- Industrial Automation: This flash memory plays a crucial role in PLCs (Programmable Logic Controllers), storing control logic that dictates machine operations in manufacturing settings.
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