M29W640FB70N6E

Manufacturer :

Micron Technology

Product Category :

Memory

Command User Interface :

yes

Base Part Number :

M29W640

Page Size :

4/8words

Memory Type :

Non-Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.5mm

Operating Mode :

ASYNCHRONOUS

Standby Current-Max :

0.0001A

Data Polling :

yes

Surface Mount :

yes

Terminal Position :

Dual

Published :

2006

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Height Seated (Max) :

1.2mm

JESD-609 Code :

e3

Programming Voltage :

3V

Supply Voltage-Max (Vsup) :

3.6V

Ready/Busy :

yes

Common Flash Interface :

yes

Supply Voltage :

3V

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

70ns

Organization :

4MX16

Number of Pins :

48

Supply Voltage-Min (Vsup) :

2.7V

Width :

12mm

Memory Density :

67108864 bit

Toggle Bit :

yes

Voltage - Supply :

2.7V~3.6V

Terminal Finish :

Matte Tin (Sn)

Sector Size :

8K64K

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

48

Memory Size :

64Mb 8M x 8 4M x 16

Length :

18.4mm

HTS Code :

8542.32.00.51

Memory Format :

Flash

Number of Sectors/Size :

8127

Boot Block :

BOTTOM

ECCN Code :

3A991.B.1.A

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BOTTOM BOOT BLOCK

Power Supplies :

3/3.3V

Alternate Memory Width :

8

Supply Current-Max :

0.02mA

Number of Terminations :

48

Memory Interface :

Parallel

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Packaging :

Tray

Memory Width :

16

Factory Lead Time :

5 Weeks

Qualification Status :

Not Qualified

Access Time (Max) :

70 ns

Pbfree Code :

yes

Number of Functions :

1