M29W512GH7AN6E

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Interface :

Parallel

JESD-609 Code :

e3

Packaging :

Bulk

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

512Mb 64M x 8 32M x 16

Supply Voltage :

3V

Surface Mount :

yes

Density :

512 Mb

Height Seated (Max) :

1.2mm

Memory Format :

Flash

Number of Terminations :

56

Number of Functions :

1

Memory Width :

16

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Alternate Memory Width :

8

Published :

2013

Memory Type :

Non-Volatile

Operating Supply Voltage :

3V

JESD-30 Code :

R-PDSO-G56

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Programming Voltage :

2.7V

Voltage - Supply :

2.7V~3.6V

Screening Level :

AEC-Q100

Organization :

32MX16

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

0.5mm

Pbfree Code :

yes

Access Time (Max) :

80 ns

Radiation Hardening :

No

Address Bus Width :

24b

Supply Voltage-Min (Vsup) :

2.7V

Length :

18.4mm

Write Cycle Time - Word, Page :

70ns