M29W400DB55N6E

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Type :

Non-Volatile

Voltage :

2.7V

Length :

18.4mm

Power Supplies :

3/3.3V

Number of Functions :

1

Number of Sectors/Size :

1217

Command User Interface :

yes

Voltage - Supply :

2.7V~3.6V

Ready/Busy :

yes

Boot Block :

BOTTOM

Write Cycle Time - Word, Page :

55ns

Alternate Memory Width :

8

Density :

4 Mb

Supply Voltage :

3.3V

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

REACH SVHC :

No SVHC

Base Part Number :

M29W400

Access Time (Max) :

55 ns

Operating Temperature :

-40°C~85°C TA

Pbfree Code :

yes

ECCN Code :

EAR99

Height Seated (Max) :

1.2mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sync/Async :

ASYNCHRONOUS

Memory Format :

Flash

Surface Mount :

yes

Radiation Hardening :

No

Mounting Type :

Surface Mount

Toggle Bit :

yes

Data Polling :

yes

Memory Width :

16

Packaging :

Tray

Terminal Pitch :

0.5mm

JESD-609 Code :

e3

Sector Size :

16K8K32K64K

Standby Current-Max :

0.0001A

Memory Interface :

Parallel

HTS Code :

8542.32.00.51

Memory Size :

4Mb 512K x 8 256K x 16

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Additional Feature :

BOTTOM BOOT BLOCK

Pin Count :

48

Number of Pins :

48

Number of Terminations :

48

Nominal Supply Current :

10mA

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Width :

12mm

Organization :

256KX16

Published :

2004

Termination :

SMD/SMT