M29W320EB70N6

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Mfr.Part #
M29W320EB70N6
Manufacturer
Micron Technology
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Datasheet
Download
Description
IC FLASH 32MBIT PARALLEL 48TSOP
Stock
5,444
In Stock :
5,444

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Manufacturer :
Micron Technology
Product Category :
Memory
RoHS Status :
ROHS3 Compliant
Write Cycle Time - Word, Page :
70ns
Qualification Status :
Not Qualified
Terminal Position :
Dual
Standby Current-Max :
0.0001A
Memory Size :
32Mb 4M x 8 2M x 16
Access Time (Max) :
70 ns
Density :
32 Mb
Boot Block :
BOTTOM
Time@Peak Reflow Temperature-Max (s) :
30
Mount :
Surface Mount
JESD-609 Code :
e0
Programming Voltage :
3V
Supply Voltage :
3V
Operating Temperature :
-40°C~85°C TA
Command User Interface :
yes
Width :
12mm
Common Flash Interface :
yes
Mounting Type :
Surface Mount
Sync/Async :
ASYNCHRONOUS
Number of Sectors/Size :
863
Pin Count :
48
Nominal Supply Current :
10mA
Packaging :
Tray
Number of Pins :
48
Power Supplies :
3/3.3V
Organization :
2MX16
Peak Reflow Temperature (Cel) :
235
Pbfree Code :
No
Package / Case :
48-TFSOP (0.724, 18.40mm Width)
ECCN Code :
3A991.B.1.A
Base Part Number :
M29W320
Length :
18.4mm
Terminal Finish :
TIN LEAD
Number of Terminations :
48
Alternate Memory Width :
8
Voltage - Supply :
2.7V~3.6V
Published :
2007
Terminal Pitch :
0.5mm
HTS Code :
8542.32.00.51
Toggle Bit :
yes
Supply Voltage-Min (Vsup) :
2.7V
Memory Format :
Flash
Reach Compliance Code :
not_compliant
Memory Width :
16
Number of Functions :
1
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Type :
Non-Volatile
Height Seated (Max) :
1.2mm
Data Polling :
yes
Additional Feature :
BOTTOM BOOT BLOCK
Ready/Busy :
yes
Sector Size :
8K64K
Supply Voltage-Max (Vsup) :
3.6V
Memory Interface :
Parallel
Introducing Memory Micron Technology M29W320EB70N6 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~85°C TA, Mounting Type:Surface Mount, Number of Pins:48, Package / Case:48-TFSOP (0.724, 18.40mm Width), Base Part Number:M29W320, Number of Terminations:48, M29W320EB70N6 pinout, M29W320EB70N6 datasheet PDF, M29W320EB70N6 amp .Beyond Memory Micron Technology M29W320EB70N6 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology M29W320EB70N6


Memory Micron Technology M29W320EB70N6 Overview

The Memory Micron Technology M29W320EB70N6 is a high-performance 32Mbit flash memory device designed for a wide range of applications where durability, speed, and flexibility are required. Manufactured by Micron Technology, this IC utilizes a parallel interface, housed in a practical 48TSOP package, ensuring smooth integration into mainstream circuit designs. Known for its reliability and high speed, this memory solution is ideal for businesses looking to enhance their electronic systems with robust storage capabilities that support both rapid data access and integrity.

M29W320EB70N6 Features

This IC flash memory component boasts a capacity of 32Mbit, enabling substantial data storage within a compact framework. The parallel interface promises excellent data transfer speeds, which is critical for applications requiring quick read and write operations. The 48TSOP packaging not only makes it durable but also compatible with a variety of standard equipment setups, facilitating easy adoption and integration.

M29W320EB70N6 Applications

  • Consumer Electronics: Used in devices such as digital cameras and gaming consoles, where quick and reliable flash memory is essential for user experience.
  • Telecommunication: Incorporated into telecom infrastructure to store firmware and other critical data, enhancing service reliability and device functionality.
  • Automotive: Integral in automotive electronics for applications such as ECU memory and infotainment systems, where durability and data integrity are paramount.
  • Industrial Control Systems: Applied in complex industrial environments to manage operational data, control firmware, and system backups, ensuring robust performance under harsh conditions.
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