M29W128GH7AN6E

Manufacturer :

Micron Technology

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Memory Type :

Non-Volatile

Pbfree Code :

yes

HTS Code :

8542.32.00.51

Standby Current-Max :

0.0001A

RoHS Status :

ROHS3 Compliant

Memory Format :

Flash

Supply Voltage :

3V

Pin Count :

56

Width :

14mm

Number of Terminations :

56

Memory Interface :

Parallel

Length :

18.4mm

Terminal Position :

Dual

Command User Interface :

yes

Published :

1998

Surface Mount :

yes

Memory Size :

128Mb 16M x 8 8M x 16

Ready/Busy :

yes

Voltage :

2.7V

Nominal Supply Current :

10mA

Sync/Async :

ASYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Power Supplies :

3/3.3V

Organization :

8KX16

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Data Polling :

yes

JESD-609 Code :

e3

Sector Size :

128K

Write Cycle Time - Word, Page :

70ns

Page Size :

8/16words

Height Seated (Max) :

1.2mm

Number of Pins :

56

Toggle Bit :

yes

Terminal Pitch :

0.5mm

Radiation Hardening :

No

Access Time (Max) :

70 ns

Voltage - Supply :

2.7V~3.6V

Number of Functions :

1

Packaging :

Tray

Memory Width :

16

ECCN Code :

3A991.B.1.A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Screening Level :

AEC-Q100

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Common Flash Interface :

yes

Number of Sectors/Size :

128

Terminal Finish :

MATTE TIN

Density :

128 Mb

Base Part Number :

M29W128

Alternate Memory Width :

8

Write Cycle Time-Max (tWC) :

0.00007ms