M29W128GH70ZS6E
- Mfr.Part #
- M29W128GH70ZS6E
- Manufacturer
- Micron Technology
- Package / Case
- 64-LBGA
- Datasheet
- Download
- Description
- IC FLASH 128MBIT PARALLEL 64FBGA
- Stock
- 873
- In Stock :
- 873
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- ECCN Code :
- 3A991.B.1.A
- Surface Mount :
- yes
- Power Supplies :
- 3/3.3V
- Length :
- 13mm
- Organization :
- 8KX16
- Mounting Type :
- Surface Mount
- Memory Format :
- Flash
- Page Size :
- 8/16words
- Package / Case :
- 64-LBGA
- Height Seated (Max) :
- 1.4mm
- Sector Size :
- 128K
- Memory Type :
- Non-Volatile
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Width :
- 16
- Number of Functions :
- 1
- Terminal Pitch :
- 1mm
- Data Polling :
- yes
- Number of Pins :
- 64
- Access Time (Max) :
- 70 ns
- Command User Interface :
- yes
- Common Flash Interface :
- yes
- Toggle Bit :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- Write Cycle Time - Word, Page :
- 70ns
- Standby Current-Max :
- 0.0001A
- Nominal Supply Current :
- 10mA
- Pbfree Code :
- yes
- Base Part Number :
- M29W128
- Number of Terminations :
- 64
- Factory Lead Time :
- 4 Weeks
- Ready/Busy :
- yes
- JESD-609 Code :
- e1
- Alternate Memory Width :
- 8
- Terminal Position :
- BOTTOM
- Voltage - Supply :
- 2.7V~3.6V
- Memory Interface :
- Parallel
- HTS Code :
- 8542.32.00.51
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- Supply Voltage :
- 3V
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Sync/Async :
- ASYNCHRONOUS
- Memory Size :
- 128Mb 16M x 8 8M x 16
- Number of Sectors/Size :
- 128
- Width :
- 11mm
- Voltage :
- 2.7V
- Density :
- 128 Mb
- Pin Count :
- 64
- Radiation Hardening :
- No
- Operating Temperature :
- -40°C~85°C TA
- Write Cycle Time-Max (tWC) :
- 0.00007ms
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- M29W128GH70ZS6E

Memory Micron Technology M29W128GH70ZS6E Overview
The Memory Micron Technology M29W128GH70ZS6E is a high-performance IC FLASH that delivers 128 Mbit of memory capacity using a parallel interface, all encapsulated in a compact 64FBGA package. This product is engineered by Micron Technology, one of the leading innovators in memory and storage solutions, ensuring top-notch reliability and performance. Designed to meet the rigorous demands of advanced electronic systems, the M29W128GH70ZS6E offers a blend of speed, durability, and efficiency, making it an ideal choice for developers and manufacturers aiming to enhance their products with substantial memory capabilities without compromising on physical space or power consumption.
M29W128GH70ZS6E Features
The M29W128GH70ZS6E flash memory chip includes several key features that make it stand out. It supports a wide voltage range and features a parallel interface for high-speed data transmission. The 64FBGA package is designed for efficient thermal management and reduced footprint on PCBs. Its robust design ensures high endurance and long-term reliability, suitable for intensive operational environments.
M29W128GH70ZS6E Applications
- Automotive Systems: Utilized in engine control units, GPS systems, and infotainment modules, where large, reliable memory storage is crucial for performance and functionality.
- Communication Equipment: Embedded in routers, switches, and base stations to store firmware and configuration data that require quick access and high reliability.
- Consumer Electronics: Applied in smart TVs, digital cameras, and gaming consoles where vast storage capacity is necessary for user applications and data.
- Industrial Automation: Incorporated in PLCs and factory automation systems to enhance data logging, process control, and machine-to-machine communication.
- Medical Devices: Used in medical imaging systems and diagnostic equipment where precision and the ability to quickly process large volumes of data are essential.
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