M29F800FB55N3E2
- Mfr.Part #
- M29F800FB55N3E2
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 8MBIT PARALLEL 48TSOP
- Stock
- 37,923
- In Stock :
- 37,923
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Base Part Number :
- M29F800
- Memory Format :
- Flash
- Surface Mount :
- yes
- Terminal Pitch :
- 0.5mm
- Width :
- 12mm
- Number of Terminations :
- 48
- Alternate Memory Width :
- 8
- Operating Temperature :
- -40°C~125°C TA
- Data Polling :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Memory Width :
- 16
- Common Flash Interface :
- yes
- Command User Interface :
- yes
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Number of Functions :
- 1
- Number of Pins :
- 48
- Memory Type :
- Non-Volatile
- Sync/Async :
- ASYNCHRONOUS
- Memory Size :
- 8Mb 1M x 8 512K x 16
- Screening Level :
- AEC-Q100
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Height Seated (Max) :
- 1.2mm
- ECCN Code :
- 3A991
- Ready/Busy :
- yes
- Density :
- 8 Mb
- Voltage - Supply :
- 4.5V~5.5V
- Sector Size :
- 16K8K32K64K
- Nominal Supply Current :
- 20mA
- Number of Sectors/Size :
- 12115
- Packaging :
- Tray
- Boot Block :
- BOTTOM
- Organization :
- 512KX16
- Standby Current-Max :
- 0.00012A
- Write Cycle Time - Word, Page :
- 55ns
- Memory Interface :
- Parallel
- Supply Voltage :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 18.4mm
- Access Time (Max) :
- 55 ns
- Additional Feature :
- BOTTOM BOOT BLOCK
- Power Supplies :
- 5V
- Pin Count :
- 48
- Contact Plating :
- Tin
- HTS Code :
- 8542.32.00.51
- Published :
- 2009
- Radiation Hardening :
- No
- Toggle Bit :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Voltage :
- 4.5V
- Operating Supply Voltage :
- 5V
- Datasheets
- M29F800FB55N3E2

Memory Micron Technology M29F800FB55N3E2 Overview
Introducing the Memory Micron Technology M29F800FB55N3E2, a cutting-edge IC FLASH memory component that is designed to meet the high standards of today's digital storage demands. This 8Mbit Flash memory device, housed in a compact 48TSOP package, offers a robust solution for developers looking to integrate reliable storage options into their advanced electronics systems. The utilization of parallel interface technology enables high-speed data transfer and communication, making it an ideal choice for applications requiring fast and efficient memory operations. With its proven performance and durability, the Memory Micron Technology M29F800FB55N3E2 is perfectly suited to support a wide range of industrial and commercial applications, aiding businesses in leveraging their technological capabilities to achieve enhanced operational efficiencies.
M29F800FB55N3E2 Features
The M29F800FB55N3E2 from Micron Technology is equipped with several key features that make it an exceptional choice for your storage needs:
- 8Mbit memory size allows for ample data storage.
- Parallel interface for rapid data access and processing.
- 48TSOP package for a compact and efficient design.
- High reliability and durability for extended use in various environments.
M29F800FB55N3E2 Applications
- Consumer Electronics: Used in devices like digital cameras and audio players, where dependable and swift memory is crucial.
- Automotive Applications: Integrates into automotive infotainment systems to provide reliable data storage and fast access to firmware and media.
- Industrial Automation: Serves as a critical component in PLCs and other automation machinery for storing executable codes and system configurations, ensuring smooth operations.
- Telecommunication Infrastructure: Essential for the storage of firmware and configurations in routers and switches, aiding in efficient network management.
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