M29F200FB55N3E2

Manufacturer :

Micron Technology

Product Category :

Memory

HTS Code :

8542.32.00.51

Organization :

128KX16

RoHS Status :

ROHS3 Compliant

Number of Terminations :

48

JESD-609 Code :

e3

Memory Interface :

Parallel

Operating Temperature :

-40°C~125°C TA

Data Polling :

yes

Write Cycle Time - Word, Page :

55ns

Published :

2010

Alternate Memory Width :

8

Mounting Type :

Surface Mount

Contact Plating :

Tin

Common Flash Interface :

yes

Memory Type :

Non-Volatile

Command User Interface :

yes

Packaging :

Tray

ECCN Code :

EAR99

Terminal Position :

Dual

Sync/Async :

ASYNCHRONOUS

Additional Feature :

BOTTOM BOOT BLOCK

Memory Size :

2Mb 256K x 8 128K x 16

Width :

12mm

Voltage - Supply :

4.5V~5.5V

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Memory Format :

Flash

Radiation Hardening :

No

Memory Width :

16

Ready/Busy :

yes

Pbfree Code :

yes

Boot Block :

BOTTOM

Screening Level :

AEC-Q100

Operating Supply Voltage :

5V

Number of Functions :

1

Surface Mount :

yes

Density :

2 Mb

Time@Peak Reflow Temperature-Max (s) :

30

Access Time (Max) :

55 ns

Voltage :

4.5V

Toggle Bit :

yes

Sector Size :

16K8K32K64K

Standby Current-Max :

0.00012A

Pin Count :

48

Terminal Pitch :

0.5mm

Number of Sectors/Size :

1213

Nominal Supply Current :

20mA

Height Seated (Max) :

1.2mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

48

Length :

18.4mm

Base Part Number :

M29F200

Power Supplies :

5V

Peak Reflow Temperature (Cel) :

260

Supply Voltage :

5V