M29F160FB55N3E2

Manufacturer :

Micron Technology

Product Category :

Memory

Sector Size :

16K8K32K64K

Ready/Busy :

yes

Supply Voltage :

5V

Pin Count :

48

Terminal Pitch :

0.5mm

Common Flash Interface :

yes

Boot Block :

BOTTOM

Pbfree Code :

yes

Width :

12mm

Memory Format :

Flash

Toggle Bit :

yes

ECCN Code :

EAR99

Memory Type :

Non-Volatile

Standby Current-Max :

0.00012A

Sync/Async :

ASYNCHRONOUS

JESD-609 Code :

e3

Number of Terminations :

48

Length :

18.4mm

Number of Pins :

48

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Functions :

1

Write Cycle Time - Word, Page :

55ns

Data Polling :

yes

Published :

2010

Screening Level :

AEC-Q100

Voltage :

4.5V

Additional Feature :

BOTTOM BOOT BLOCK

Power Supplies :

5V

Memory Size :

16Mb 2M x 8 1M x 16

Voltage - Supply :

4.5V~5.5V

Operating Temperature :

-40°C~125°C TA

Memory Interface :

Parallel

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Organization :

1MX16

Terminal Finish :

MATTE TIN

Packaging :

Tray

HTS Code :

8542.32.00.51

Time@Peak Reflow Temperature-Max (s) :

30

Command User Interface :

yes

Number of Sectors/Size :

12131

Terminal Position :

Dual

Base Part Number :

M29F160

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.2mm

Surface Mount :

yes

Memory Width :

16

Operating Supply Voltage :

5V

Access Time (Max) :

55 ns

Alternate Memory Width :

8

Nominal Supply Current :

20mA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Density :

16 Mb