M28W640HCB70N6E
- Mfr.Part #
- M28W640HCB70N6E
- Manufacturer
- Micron Technology
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 64MBIT PARALLEL 48TSOP
- Stock
- 3,673
- In Stock :
- 3,673
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Address Bus Width :
- 22b
- Boot Block :
- BOTTOM
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Memory Format :
- Flash
- Contact Plating :
- Gold, Tin
- Height Seated (Max) :
- 1.2mm
- Surface Mount :
- yes
- Base Part Number :
- M28W640
- Power Supplies :
- 3/3.3V
- Packaging :
- Bulk
- Memory Width :
- 16
- JESD-609 Code :
- e3
- Length :
- 18.4mm
- Word Size :
- 16b
- Additional Feature :
- BOTTOM BOOT BLOCK
- Data Polling :
- No
- Terminal Pitch :
- 0.5mm
- Pin Count :
- 48
- Nominal Supply Current :
- 18mA
- Density :
- 64 Mb
- Radiation Hardening :
- No
- Voltage - Supply :
- 2.7V~3.6V
- Number of Pins :
- 48
- Pbfree Code :
- yes
- Memory Size :
- 64Mb 4M x 16
- Number of Terminations :
- 48
- Sync/Async :
- ASYNCHRONOUS
- Peak Reflow Temperature (Cel) :
- 260
- Page Size :
- 4words
- Terminal Position :
- Dual
- Common Flash Interface :
- yes
- Memory Type :
- Non-Volatile
- Mounting Type :
- Surface Mount
- Write Cycle Time - Word, Page :
- 70ns
- Command User Interface :
- yes
- ECCN Code :
- 3A991.B.1.A
- Standby Current-Max :
- 0.000005A
- Memory Interface :
- Parallel
- Terminal Finish :
- MATTE TIN
- Voltage :
- 2.7V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Sector Size :
- 4K32K
- Access Time (Max) :
- 70 ns
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Organization :
- 4MX16
- Number of Sectors/Size :
- 8127
- Number of Functions :
- 1
- Toggle Bit :
- No
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 30
- HTS Code :
- 8542.32.00.51
- Datasheets
- M28W640HCB70N6E

Memory Micron Technology M28W640HCB70N6E Overview
The Memory Micron Technology M28W640HCB70N6E is a high-performance 64Mbit flash memory component, housed in a compact 48TSOP package. This integrated circuit by Micron Technology delivers exceptional durability and reliability for applications requiring fast and flexible non-volatile memory solutions. With its parallel interface, it offers rapid programming and erase capabilities, making it an ideal choice for embedded systems where speed and efficiency are crucial. The robust design of this flash memory ensures it can meet the demanding requirements of industrial, automotive, and communication markets, helping businesses scale their operations effectively.
M28W640HCB70N6E Features
The M28W640HCB70N6E IC flash memory offers several key features including high density storage capacity, parallel interface for quick data access, and low power consumption. It supports a wide voltage range and its endurance and data retention capabilities make it suitable for intensive applications where data integrity is paramount.
M28W640HCB70N6E Applications
- Automotive Electronics: Used in engine management systems and infotainment systems to store firmware that controls vehicle operations and user interface.
- Communication Equipment: Utilized in routers and modems to store firmware for protocol management and operation control, ensuring robust and efficient data handling.
- Consumer Electronics: Integrated into devices like set-top boxes and gaming consoles where rapid booting and high-reliability storage of user settings and preferences are needed.
- Industrial Control Systems: Serves as a reliable solution for storing operational codes and configurations in automation equipment, enhancing system stability and performance.
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