LXP1002-23-0
- Mfr.Part #
- LXP1002-23-0
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SI PIN NON HERMETIC EPSM SMT
- Stock
- 160
- In Stock :
- 160
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- Manufacturer :
- Microchip Technology
- Product Category :
- Diodes - RF
- Frequency Band :
- L BAND
- Voltage - Peak Reverse (Max) :
- 50V
- Reach Compliance Code :
- Compliant
- Military :
- No
- Lead Shape :
- Gull-wing
- Standard Package Name :
- SOT-23
- Diode Capacitance-Nom :
- 0.32 pF
- Surface Mount :
- yes
- Diode Type :
- PIN - Single
- Minority Carrier Lifetime-Nom :
- 1.5 μs
- JESD-30 Code :
- R-PDSO-G3
- Series :
- -
- Diode Forward Resistance-Max :
- 4 Ω
- RoHS Status :
- RoHS Compliant
- Current - Max :
- 100 mA
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Diode Element Material :
- SILICON
- Supplier Device Package :
- SOT-23-3
- Typical Carrier Life Time (us) :
- 1.5
- Maximum Power Dissipation (mW) :
- 250
- Package Height :
- 1.02
- Application :
- Attenuator
- Brand :
- Microchip Technology / Atmel
- Diode Res Test Frequency :
- 100 MHz
- Frequency Range :
- UHF|VHF
- Package :
- Bulk
- Configuration :
- Single
- Manufacturer :
- Microchip
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Maximum Reverse Voltage (V) :
- 100
- Product Status :
- Active
- Base Product Number :
- LXP1002
- PCB changed :
- 3
- Package Width :
- 1.27
- Mounting :
- Surface Mount
- Type :
- Attenuator
- ECCN (US) :
- EAR99
- Breakdown Voltage-Min :
- 100 V
- ECCN Code :
- EAR99
- Diode Capacitance-Max :
- 0.32 pF
- Capacitance @ Vr, F :
- 0.32pF @ 50V, 1MHz
- RoHS :
- Details
- Maximum Operating Temperature (°C) :
- 125
- Power Dissipation (Max) :
- 250 mW
- Operating Temperature :
- -55°C ~ 125°C
- Number of Terminals :
- 3
- Product Category :
- PIN Diodes
- Product Type :
- PIN Diodes
- Maximum Series Resistance @ Maximum IF (Ohm) :
- 4@100mA
- Supplier Package :
- SOT-23
- Terminal Position :
- Dual
- HTS Code :
- 8541.10.00.80
- Minimum Operating Temperature (°C) :
- -55
- HTS :
- 8541.10.00.80
- Reverse Test Voltage :
- 50 V
- Technology :
- Si
- Maximum Reverse Leakage Current (uA) :
- 10
- Subcategory :
- Diodes and Rectifiers
- Package Shape :
- RECTANGULAR
- Power Dissipation-Max :
- 0.25 W
- Package Length :
- 2.92
- Resistance @ If, F :
- 4Ohm @ 100mA, 100MHz
- Diode Res Test Current :
- 100 mA
- Number of Elements :
- 1
- Datasheets
- LXP1002-23-0

PIN - Single 0.32pF @ 50V, 1MHz -55°C ~ 125°C SILICON DUAL TO-236-3, SC-59, SOT-23-3
LXP1002-23-0 Overview
This device can consume a maximum reverse voltage of about 100.The device is designed to operate from a maximal current of 100 mA volts.A maximum reverse voltage of 50V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.Reverse test voltages within 50 V are required for a valid conversion result.
LXP1002-23-0 Features
from a maximum current of 100 mA volts
at its lowest breakdown voltage of 100 V
LXP1002-23-0 Applications
There are a lot of Microchip Technology
LXP1002-23-0 applications of RF diodes.
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
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