LTC4446IMS8E#PBF
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- Mfr.Part #
- LTC4446IMS8E#PBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 369
- In Stock ：
- 369
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Rise Time :
- 80ns
- Logic Voltage - VIL, VIH :
- 1.85V 3.25V
- Width :
- 3mm
- Pin Count :
- 8
- Operating Temperature :
- -40°C~125°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- High Side Driver :
- yes
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- 250
- Output Peak Current Limit-Nom :
- 3A
- Number of Pins :
- 8
- Surface Mount :
- yes
- Turn On Time :
- 0.045 µs
- Base Part Number :
- LTC4446
- Lifecycle Status :
- Production (Last Updated: 3 weeks ago)
- Terminal Form :
- Gull wing
- High Side Voltage - Max (Bootstrap) :
- 114V
- Terminal Pitch :
- 0.65mm
- Rise / Fall Time (Typ) :
- 8ns 5ns
- Number of Terminations :
- 8
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Packaging :
- Tube
- Turn Off Time :
- 0.04 µs
- Driven Configuration :
- Half-Bridge
- Current - Peak Output (Source, Sink) :
- 2.5A 3A
- Number of Drivers :
- 2
- Factory Lead Time :
- 8 Weeks
- Height Seated (Max) :
- 1.1mm
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Turn On Delay Time :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supply Voltage :
- 12V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Propagation Delay :
- 45 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Type :
- N-Channel MOSFET
- Input Type :
- Non-Inverting
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3mm
- Number of Functions :
- 1
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 50 ns
- Mounting Type :
- Surface Mount
- Channel Type :
- Independent
- Voltage - Supply :
- 7.2V~13.5V
- Datasheets
- LTC4446IMS8E#PBF
Gate Drivers Analog Devices, Inc. LTC4446IMS8E#PBF Overview
The LTC4446IMS8E#PBF by Analog Devices, Inc. is a high-performance, half-bridge gate driver designed to effectively manage power in sophisticated electronic systems. This IC ensures efficient driving of N-channel MOSFETs or IGBTs, making it an indispensable component for high-density power applications. Its robust design facilitates minimal propagation delays and optimized gate drive voltage, which are crucial for high-speed switching applications. The LTC4446IMS8E#PBF is tailored to meet the demands of applications requiring precise control and high reliability, ensuring enhanced system performance and durability.
LTC4446IMS8E#PBF Features
- High voltage operation capability up to 100V.
- Integrated bootstrap diode for reduced system complexity and enhanced reliability.
- Dual independent drive channels for flexible configurations and improved system design.
- Strong drive ability with up to 2.5A output per channel, suitable for high-power applications.
- Low propagation delay and matching to ensure synchronized output, critical for reducing switching losses.
- Shoot-through protection to prevent damage during high-frequency operation.
LTC4446IMS8E#PBF Applications
- Solar Power Inverters: Utilized in driving the power switches of solar inverters, enhancing efficiency and reliability in renewable energy applications.
- Electric Vehicles: Critical in managing the power conversion processes within electric vehicle powertrains, offering robust performance under demanding conditions.
- Uninterruptible Power Supplies (UPS): Ensures stable operation and high efficiency in power backup systems, vital for mission-critical environments.
- High-Frequency Trading Servers: Provides the high-speed, reliable switching necessary for power supplies within trading servers where uptime is critical.
- Industrial Motor Drives: Offers precise control for industrial motors, supporting complex motion and positioning systems required in automated manufacturing lines.
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