LTC4446EMS8E#TRPBF
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- Mfr.Part #
- LTC4446EMS8E#TRPBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 49,913
- In Stock ：
- 49,913
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Driven Configuration :
- Half-Bridge
- Published :
- 2008
- JESD-30 Code :
- S-PDSO-G8
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Base Part Number :
- LTC4446
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- High Side Voltage - Max (Bootstrap) :
- 114V
- Peak Reflow Temperature (Cel) :
- 250
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Gate Type :
- N-Channel MOSFET
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3mm
- Voltage - Supply :
- 7.2V~13.5V
- Logic Voltage - VIL, VIH :
- 1.85V 3.25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Functions :
- 1
- Terminal Form :
- Gull wing
- Channel Type :
- Independent
- Pin Count :
- 8
- Output Peak Current Limit-Nom :
- 3A
- Width :
- 3mm
- Current - Peak Output (Source, Sink) :
- 2.5A 3A
- Number of Terminations :
- 8
- Turn On Time :
- 0.045 µs
- Terminal Position :
- Dual
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Supply Voltage :
- 12V
- Height Seated (Max) :
- 1.1mm
- Rise / Fall Time (Typ) :
- 8ns 5ns
- High Side Driver :
- yes
- Turn Off Time :
- 0.04 µs
- Terminal Pitch :
- 0.65mm
- Number of Drivers :
- 2
- Factory Lead Time :
- 16 Weeks
- Input Type :
- Non-Inverting
- Operating Temperature :
- -40°C~125°C TJ
- JESD-609 Code :
- e3
- Datasheets
- LTC4446EMS8E#TRPBF
Gate Drivers Analog Devices, Inc. LTC4446EMS8E#TRPBF Overview
The Gate Drivers Analog Devices, Inc. LTC4446EMS8E#TRPBF is a high-performance, dual high-side N-channel MOSFET driver designed to maximize efficiency in power conversion applications. This integrated circuit ensures robust operation with its ability to drive MOSFET gates with up to 4A of peak output current. The LTC4446EMS8E#TRPBF is optimized for handling high-voltage and high-speed transients, making it an ideal choice for challenging environments where reliability and performance are paramount.
LTC4446EMS8E#TRPBF Features
The LTC4446EMS8E#TRPBF features include powerful 4A peak drive currents and an adaptive shoot-through protection. It operates from a supply voltage up to 35V, providing a versatile solution for various half-bridge configurations. Additional features such as independent high-side and low-side input logic signals, under-voltage lockout, and a robust thermal performance enhance its usability in critical applications.
LTC4446EMS8E#TRPBF Applications
- DC/DC Converters - Utilizes dual drivers to optimize switch timing and minimize power loss, enhancing efficiency in DC/DC conversion circuits.
- Solar Power Inverters - Ensures reliable switching and long-term durability under fluctuating environmental conditions typical in solar energy systems.
- Motor Control Systems - Provides precise gate drive control required for high-performance motor speed and torque management.
- UPS Systems - Drives MOSFETs efficiently to ensure uninterrupted power supply operations with minimal heat generation.
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