LTC4442IMS8E#PBF
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- Mfr.Part #
- LTC4442IMS8E#PBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 989
- In Stock ：
- 989
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Output Peak Current Limit-Nom :
- 2.4A
- Operating Temperature :
- -40°C~125°C TJ
- Max Output Current :
- 5A
- Number of Pins :
- 8
- Power Supplies :
- 7V
- Additional Feature :
- IT CAN ALSO OPERATE WITH 5V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 6V~9.5V
- Turn On Delay Time :
- 20 ns
- Lifecycle Status :
- Production (Last Updated: 1 month ago)
- Mounting Type :
- Surface Mount
- Rise Time :
- 12ns
- Rise / Fall Time (Typ) :
- 12ns 8ns
- Current - Peak Output (Source, Sink) :
- 2.4A 2.4A
- Driven Configuration :
- Half-Bridge
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Drivers :
- 2
- Fall Time (Typ) :
- 8 ns
- Number of Functions :
- 1
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Published :
- 2010
- Base Part Number :
- LTC4442
- ECCN Code :
- EAR99
- High Side Driver :
- yes
- Channel Type :
- SYNCHRONOUS
- Packaging :
- Tube
- Supply Voltage :
- 7V
- Pin Count :
- 8
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Propagation Delay :
- 20 ns
- Peak Reflow Temperature (Cel) :
- 260
- Input Type :
- Non-Inverting
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 8
- Terminal Pitch :
- 0.65mm
- High Side Voltage - Max (Bootstrap) :
- 42V
- Height Seated (Max) :
- 1.1mm
- Gate Type :
- N-Channel MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 3mm
- Width :
- 3mm
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheets
- LTC4442IMS8E#PBF
Gate Drivers Analog Devices, Inc. LTC4442IMS8E#PBF Overview
The LTC4442IMS8E#PBF by Analog Devices, Inc. is a robust half-bridge gate driver, designed to interface with N-channel MOSFETs and IGBTs. This gate driver ensures efficient switching performance and enhanced system reliability, ideal for demanding applications requiring high power density and precise control. The device integrates powerful driver capabilities to minimize switching losses and offers a range of built-in protection features to safeguard your circuitry against abnormal operating conditions. The LTC4442IMS8E#PBF improves overall system efficiency and is pivotal in applications demanding high-speed and reliable switching.
LTC4442IMS8E#PBF Features
- High peak output drive current: Offers up to 4A, ensuring robust drive capability and fast switching speeds.
- Adjustable under-voltage lockout: Provides customizable threshold settings to enhance operational stability.
- Powerful gate drive voltage: Capable of driving gate voltages up to 6V to 15V, allowing for versatile use across various MOSFET and IGBT technologies.
- Integrated shoot-through protection: Prevents simultaneous high-side and low-side conduction, protecting the device against potential damage.
- Thermal shutdown: Adds an additional layer of protection by automatically shutting down the driver at critical temperature thresholds.
LTC4442IMS8E#PBF Applications
- Motor Control Systems: Enhances the efficiency and reliability of motor drives in industrial automation by providing rapid, controlled gate switching.
- Power Supply Units: Ensures stable and efficient power delivery in high-performance server farms and telecom infrastructures.
- Electric Vehicles: Utilized in electric vehicle powertrain systems to manage the high currents required for vehicle propulsion efficiently.
- Solar Power Inverters: Key component in converting DC to AC efficiently, critical for maximizing solar panel energy output.
- Uninterruptible Power Supplies (UPS): Critical in managing switching functions to maintain continuous power supply during outages.
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