LTC4442EMS8E-1#PBF
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- Mfr.Part #
- LTC4442EMS8E-1#PBF
- Manufacturer
- Analog Devices, Inc.
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8MSOP
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Analog Devices, Inc.
- Product Category :
- Gate Drivers
- Published :
- 2010
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- High Side Driver :
- yes
- Lifecycle Status :
- Production (Last Updated: 1 month ago)
- Factory Lead Time :
- 8 Weeks
- Additional Feature :
- IT CAN ALSO OPERATE WITH 5V
- Pin Count :
- 8
- Propagation Delay :
- 20 ns
- Number of Drivers :
- 2
- Rise Time :
- 12ns
- Lead Free :
- Lead Free
- Supply Voltage :
- 7V
- Power Supplies :
- 7V
- Voltage - Supply :
- 6V~9.5V
- Input Type :
- Non-Inverting
- High Side Voltage - Max (Bootstrap) :
- 42V
- Width :
- 3mm
- Packaging :
- Tube
- Surface Mount :
- yes
- Height Seated (Max) :
- 1.1mm
- Fall Time (Typ) :
- 8 ns
- JESD-609 Code :
- e3
- Rise / Fall Time (Typ) :
- 12ns 8ns
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Turn On Delay Time :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Base Part Number :
- LTC4442
- Output Peak Current Limit-Nom :
- 2.4A
- Max Output Current :
- 5A
- Terminal Position :
- Dual
- Terminal Pitch :
- 0.65mm
- Gate Type :
- N-Channel MOSFET
- Operating Temperature :
- -40°C~125°C TJ
- Length :
- 3mm
- Driven Configuration :
- Half-Bridge
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Number of Functions :
- 1
- Current - Peak Output (Source, Sink) :
- 2.4A 2.4A
- Channel Type :
- SYNCHRONOUS
- Datasheets
- LTC4442EMS8E-1#PBF
Gate Drivers Analog Devices, Inc. LTC4442EMS8E-1#PBF Overview
The LTC4442EMS8E-1#PBF from Analog Devices, Inc. is a high-performance, half-bridge gate driver designed to enhance the efficiency and reliability of your power management systems. This advanced IC gate driver is crucial for enabling robust switching of MOSFETs and IGBTs, significantly improving the performance of high-frequency power circuits. With its compact 8-MSOP package, it seamlessly integrates into space-constrained applications, offering a powerful solution for driving high-power switches with precision and ease. The Gate Drivers Analog Devices, Inc. LTC4442EMS8E-1#PBF ensures minimal propagation delays and optimal gate drive characteristics, making it an ideal choice for critical applications where performance cannot be compromised.
LTC4442EMS8E-1#PBF Features
This gate driver is equipped with robust features that ensure high efficiency and reliability in power management. Key features include an adaptive shoot-through protection to prevent simultaneous conduction of MOSFETs or IGBTs, powerful 4A output drivers that maximize switching speed and minimize transition losses, and an operating range from -40°C to 125°C that guarantees performance in extreme conditions. Additionally, its UVLO (Under-Voltage Lockout) ensures that the device operates safely by monitoring the supply voltage.
LTC4442EMS8E-1#PBF Applications
- Motor Control Systems: Utilized in controlling motor drives, ensuring efficient operation and protection against fault conditions.
- DC/DC Converters: Plays a crucial role in managing power conversion to provide stable DC output in various electronic devices.
- Solar Inverters: Key in converting DC from solar panels into AC, enhancing energy efficiency and grid compatibility.
- Electric Vehicles: Used in electric vehicle power systems to manage power distribution and increase overall vehicle efficiency.
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