LM5112MY
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- Mfr.Part #
- LM5112MY
- Manufacturer
- Texas Instruments
- Package / Case
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE 8MSOP
- Stock
- 26,940
- In Stock ：
- 26,940
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- Manufacturer :
- Texas Instruments
- Product Category :
- Gate Drivers
- Termination :
- SMD/SMT
- Max Supply Current :
- 2mA
- Output Current :
- 3A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Functions :
- 1
- REACH SVHC :
- No SVHC
- Driven Configuration :
- Low-Side
- Peak Reflow Temperature (Cel) :
- 260
- Number of Drivers :
- 1
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Rise / Fall Time (Typ) :
- 14ns 12ns
- Base Part Number :
- LM5112
- Output Peak Current Limit-Nom :
- 7A
- Propagation Delay :
- 40 ns
- Terminal Pitch :
- 0.65mm
- Width :
- 3mm
- Gate Type :
- N-Channel MOSFET
- Turn Off Time :
- 0.04 µs
- Rise Time :
- 14ns
- Max Output Current :
- 7A
- Operating Temperature :
- -40°C~125°C TJ
- Terminal Position :
- Dual
- Channel Type :
- Single
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Voltage - Supply :
- 3.5V~14V
- Length :
- 3mm
- Supply Voltage :
- 12V
- Fall Time (Typ) :
- 12 ns
- Number of Pins :
- 8
- Nominal Supply Current :
- 2mA
- High Side Driver :
- No
- Pin Count :
- 8
- Package / Case :
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad
- Turn On Delay Time :
- 40 ns
- Logic Voltage - VIL, VIH :
- 0.8V 2.3V
- JESD-609 Code :
- e0
- Mounting Type :
- Surface Mount
- Current - Peak Output (Source, Sink) :
- 3A 7A
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Input Type :
- Inverting, Non-Inverting
- Output Voltage :
- 15V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Turn On Time :
- 0.04 µs
- Height :
- 860μm
- Datasheets
- LM5112MY
Gate Drivers Texas Instruments LM5112MY Overview
The Texas Instruments LM5112MY Gate Driver is a high-performance, low-side gate driver designed to efficiently control MOSFETs and IGBTs. This device is engineered to optimize power efficiency and reliability in a variety of applications, making it an ideal choice for engineers looking to enhance their power management systems. With its robust design and advanced features, the LM5112MY is perfectly suited for handling challenging power environments, ensuring smooth operation and long service life. This component's ability to drive a broad range of MOSFETs and IGBTs with precision highlights its versatility and the technical expertise of Texas Instruments in developing quality gate driving solutions.
LM5112MY Features
- Dual independent gate drivers for flexible application configurations.
- Wide operating voltage range from 4.5V to 14V, catering to diverse power systems.
- High peak output current of up to 5A, enabling robust and efficient switching.
- Fast propagation delays and rise/fall times for improved switching performance.
- Built-in under-voltage lockout for enhanced operational safety and reliability.
- Compact 8-MSOP package, ideal for space-constrained applications.
LM5112MY Applications
- DC-DC Converters - Utilizes the high switching speed to improve efficiency in voltage conversion applications.
- Solar Inverters - Drives MOSFETs in solar power systems to efficiently convert DC to AC power.
- Motor Control Systems - Provides rapid, reliable gate switching for controlling motor speeds and torque in industrial applications.
- Power Supply Units - Ensures stable operation of power supplies with its robust driving capabilities and protective features.
- Automotive Electronics - Suitable for driving low-side gates in automotive applications where high current capability and thermal stability are required.
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