LH28F160S3HT-L10A

Manufacturer :

Sharp Microelectronics

Product Category :

Memory

JESD-609 Code :

e0

Memory Interface :

Parallel

Access Time (Max) :

120 ns

Supply Voltage-Min (Vsup) :

2.7V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Length :

18.4mm

Organization :

1MX16

Terminal Position :

Dual

Supply Voltage-Max (Vsup) :

3.6V

Operating Temperature :

-40°C~85°C TA

Alternate Memory Width :

8

Additional Feature :

ACCESS TIME 100 NS AT VCC 3.3+/-0.3V

Qualification Status :

Not Qualified

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Memory Format :

Flash

Memory Width :

16

Write Cycle Time - Word, Page :

100ns

Mounting Type :

Surface Mount

Number of Terminations :

56

Terminal Finish :

Tin/Lead (Sn/Pb)

Programming Voltage :

2.7V

Memory Density :

16777216 bit

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.5mm

Frequency :

100GHz

Published :

2002

JESD-30 Code :

R-PDSO-G56

Packaging :

Tray

Supply Voltage :

3V

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ASYNCHRONOUS

Voltage - Supply :

3V~3.6V

Memory Size :

16Mb 2M x 8 1M x 16

Memory Type :

Non-Volatile

Surface Mount :

yes

Width :

14mm