LF444ACN

Manufacturer :

National Semiconductor

Product Category :

Instrumentation, OP Amps, Buffer Amps

ECCN Code :

EAR99

Packaging :

Tube

Low-Offset :

No

Number of Elements :

4

Power Supplies :

+-15V

Gain Bandwidth Product :

1MHz

Power Dissipation :

670mW

Voltage - Input Offset :

2mV

Series :

BI-FET™

Number of Terminations :

14

Voltage Gain :

100dB

Supply Voltage :

20V

Output Current :

8mA

Pin Count :

14

Low-Bias :

yes

Pbfree Code :

No

Lead Free :

Contains Lead

Power Supply Rejection Ratio (PSRR) :

80dB

Common Mode Rejection Ratio :

80 dB

Number of Pins :

14

Operating Supply Current :

600μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Current - Input Bias :

10pA

Number of Functions :

4

Nominal Supply Current :

600μA

Micropower :

yes

Terminal Position :

Dual

Mounting Type :

Through Hole

Architecture :

VOLTAGE-FEEDBACK

Input Offset Voltage (Vos) :

5mV

Packing Method :

Rail

Bias Current-Max (IIB) @25C :

0.00005μA

Terminal Finish :

Tin/Lead (Sn/Pb)

Length :

19.18mm

Voltage - Supply, Single/Dual (±) :

10V~44V ±5V~22V

Base Part Number :

LF444

JESD-609 Code :

e0

Unity Gain BW-Nom :

1000 kHz

Frequency Compensation :

yes

Height Seated (Max) :

5.08mm

Package / Case :

14-DIP (0.300, 7.62mm)

Average Bias Current-Max (IIB) :

0.00005μA

Amplifier Type :

J-FET

Slew Rate :

1V/μs

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

0°C~70°C

Radiation Hardening :

No

Operating Supply Voltage :

22V

Neg Supply Voltage-Nom (Vsup) :

-20V