LET20030C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Frequency :

2GHz

Case Connection :

SOURCE

Transistor Type :

LDMOS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Test :

400mA

Package / Case :

M243

Gate to Source Voltage (Vgs) :

80V

Mount :

Screw

Number of Terminations :

2

Max Power Dissipation :

108W

Configuration :

Single

Lead Free :

Lead Free

JESD-30 Code :

R-PDFM-F2

Base Part Number :

LET20030

Drain Current-Max (Abs) (ID) :

4A

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Terminal Form :

Flat

Max Operating Temperature :

200°C

Continuous Drain Current (ID) :

9A

Transistor Application :

AMPLIFIER

Current Rating :

9A

Number of Pins :

3

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

75V

Voltage - Test :

28V

Pin Count :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Output :

45W

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Noise Figure :

13.9 dB

Packaging :

Bulk

Terminal Position :

Dual

DS Breakdown Voltage-Min :

65V