KTC3198-GR-B0 B1G
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- Mfr.Part #
- KTC3198-GR-B0 B1G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92
- Stock
- 37,755
- In Stock ：
- 37,755
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 150mA, 6V
- Supplier Device Package :
- TO-92
- Frequency - Transition :
- 80MHz
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- Package :
- Bulk
- Series :
- -
- Current - Collector (Ic) (Max) :
- 150 mA
- Power - Max :
- 500 mW
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- KTC3198-GR-B0 B1G
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
KTC3198-GR-B0 B1G Overview
This device has a DC current gain of 200 @ 150mA, 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 50 V maximal voltage is present.
KTC3198-GR-B0 B1G Features
the DC current gain for this device is 200 @ 150mA, 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92
KTC3198-GR-B0 B1G Applications
There are a lot of Taiwan Semiconductor
KTC3198-GR-B0 B1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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