KSP92BU
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- Mfr.Part #
- KSP92BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92-3
- Stock
- 823
- In Stock ：
- 823
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -300V
- Packaging :
- Bulk
- Weight :
- 179mg
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Voltage - Rated DC :
- -300V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSP92
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Published :
- 2002
- Polarity/Channel Type :
- PNP
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- -500mV
- Pbfree Code :
- yes
- Factory Lead Time :
- 7 Weeks
- Current Rating :
- -500mA
- Collector Emitter Voltage (VCEO) :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- KSP92BU
,TO-226_straightlead.jpg)
PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP92BU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSP92BU Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
KSP92BU Applications
There are a lot of ON Semiconductor
KSP92BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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