KSP06TA
- Mfr.Part #
- KSP06TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 5,911
- In Stock :
- 5,911
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 500mA
- Current Rating :
- 500mA
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 80V
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 250mV
- Voltage - Rated DC :
- 80V
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Length :
- 4.58mm
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- KSP06
- Published :
- 2002
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 80V
- Width :
- 3.86mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- hFE Min :
- 50
- JESD-609 Code :
- e3
- Height :
- 4.58mm
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- KSP06TA
KSP06TA Documents

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP06TA Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor
KSP06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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