KSP06TA
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- Mfr.Part #
- KSP06TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 5,911
- In Stock ：
- 5,911
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Box (TB)
- Height :
- 4.58mm
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 625mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Weight :
- 240mg
- ECCN Code :
- EAR99
- Published :
- 2002
- hFE Min :
- 50
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Width :
- 3.86mm
- Voltage - Rated DC :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 4.58mm
- Emitter Base Voltage (VEBO) :
- 4V
- Base Part Number :
- KSP06
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- KSP06TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP06TA Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor
KSP06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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