KSP06TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Length :

4.58mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Width :

3.86mm

RoHS Status :

ROHS3 Compliant

Height :

4.58mm

Power Dissipation :

625mW

Collector Emitter Saturation Voltage :

250mV

Transition Frequency :

100MHz

Transistor Type :

NPN

Pbfree Code :

yes

Voltage - Rated DC :

80V

Emitter Base Voltage (VEBO) :

4V

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Max Breakdown Voltage :

80V

Polarity/Channel Type :

NPN

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA

Transistor Element Material :

SILICON

Radiation Hardening :

No

Current Rating :

500mA

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

80V

Operating Temperature :

150°C TJ

Base Part Number :

KSP06

Published :

2002

Collector Emitter Voltage (VCEO) :

80V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

ECCN Code :

EAR99

hFE Min :

50

Terminal Position :

BOTTOM

Number of Terminations :

3

Max Collector Current :

500mA

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Packaging :

Tape and Box (TB)

Factory Lead Time :

8 Weeks

Frequency :

100MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 11 hours ago)

Weight :

240mg

Lead Free :

Lead Free

Max Power Dissipation :

625mW