KSP06TA
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- Mfr.Part #
- KSP06TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 1,251
- In Stock ：
- 1,251
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Length :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 4V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Width :
- 3.86mm
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 8 Weeks
- hFE Min :
- 50
- Published :
- 2002
- Max Power Dissipation :
- 625mW
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 11 hours ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Height :
- 4.58mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 625mW
- Base Part Number :
- KSP06
- Datasheets
- KSP06TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP06TA Overview
DC current gain in this device equals 50 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor
KSP06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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