KSP05TA
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- Mfr.Part #
- KSP05TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 1,880
- In Stock ：
- 1,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- hFE Min :
- 50
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 60V
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSP05
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Factory Lead Time :
- 17 Weeks
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Datasheets
- KSP05TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP05TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KSP05TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP05TA Applications
There are a lot of ON Semiconductor
KSP05TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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