KSH31CTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Transistor Element Material :

SILICON

Max Power Dissipation :

1.56W

Length :

6.6mm

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Mounting Type :

Surface Mount

Number of Pins :

3

hFE Min :

10

Transistor Type :

NPN

Pbfree Code :

yes

Max Collector Current :

3A

Max Breakdown Voltage :

100V

Power Dissipation :

1.56W

Number of Elements :

1

Width :

6.1mm

Lead Free :

Lead Free

Base Part Number :

KSH31

Emitter Base Voltage (VEBO) :

5V

Gain Bandwidth Product :

3MHz

Radiation Hardening :

No

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Collector Emitter Saturation Voltage :

1.2V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Voltage - Rated DC :

100V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

3MHz

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

50μA

Height :

2.3mm

Factory Lead Time :

4 Weeks

Frequency :

3MHz

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Number of Terminations :

2

Current Rating :

3A

Contact Plating :

Tin

Weight :

260.37mg

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

100V

Element Configuration :

Single

Operating Temperature :

150°C TJ

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Voltage (VCEO) :

100V

Mount :

Surface Mount