K4B4G1646E-BYK000

Manufacturer :

Samsung Semiconductor

Product Category :

Memory

Chip Density (bit) :

4G

Mounting :

Surface Mount

EU RoHS :

Compliant

PCB changed :

96

Maximum Operating Temperature (°C) :

95

Minimum Operating Supply Voltage (V) :

1.283|1.425

Maximum Access Time (ns) :

0.225

DRAM Type :

DDR3L SDRAM

Pin Count :

96

Number of Words per Bank :

32M

ECCN (US) :

EAR99

Package Width :

7.5

Data Bus Width (bit) :

16

PPAP :

No

Typical Operating Supply Voltage (V) :

1.35|1.5

Supplier Package :

FBGA

Standard Package Name :

BGA

Operating Current (mA) :

115

Maximum Operating Supply Voltage (V) :

1.45|1.575

Minimum Operating Temperature (°C) :

0

Supplier Temperature Grade :

COMMERCIAL

Maximum Clock Rate (MHz) :

1600

Number of Internal Banks :

8

Number of I/O Lines (bit) :

16

Organization :

256MX16

Number of Bits/Word (bit) :

16

Automotive :

No

Package Length :

13.3

Address Bus Width (bit) :

18

Lead Shape :

Ball