JANTXV2N6383
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- Mfr.Part #
- JANTXV2N6383
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 10A TO204AA
- Stock
- 12,230
- In Stock ：
- 12,230
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Lead, Tin
- Terminal Position :
- BOTTOM
- Series :
- Military, MIL-PRF-19500/523
- Collector Emitter Voltage (VCEO) :
- 40V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Factory Lead Time :
- 20 Weeks
- JESD-30 Code :
- O-MBFM-P2
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 2V
- Terminal Form :
- PIN/PEG
- Published :
- 2002
- Case Connection :
- COLLECTOR
- Current - Collector (Ic) (Max) :
- 10A
- Power - Max :
- 6W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Number of Elements :
- 1
- Pin Count :
- 2
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Polarity :
- NPN
- Datasheets
- JANTXV2N6383
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JANTXV2N6383 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTXV2N6383 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
JANTXV2N6383 Applications
There are a lot of Microsemi Corporation
JANTXV2N6383 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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