JANTXV2N6300
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- Mfr.Part #
- JANTXV2N6300
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO66
- Stock
- 4,638
- In Stock ：
- 4,638
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- -55°C~200°C TJ
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Transition Frequency :
- 4MHz
- Series :
- Military, MIL-PRF-19500/539
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2007
- Factory Lead Time :
- 20 Weeks
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Terminal Form :
- PIN/PEG
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 2
- Power - Max :
- 75W
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Current - Collector Cutoff (Max) :
- 500μA ICBO
- Contact Plating :
- Lead, Tin
- Polarity :
- NPN
- JESD-30 Code :
- O-MBFM-P2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-213AA, TO-66-2
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector (Ic) (Max) :
- 8A
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Datasheets
- JANTXV2N6300
NPN - Darlington -55°C~200°C TJ 500μA ICBO 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTXV2N6300 Overview
In this device, the DC current gain is 750 @ 4A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 80mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.
JANTXV2N6300 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTXV2N6300 Applications
There are a lot of Microsemi Corporation
JANTXV2N6300 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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