JANTXV2N5680
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- Mfr.Part #
- JANTXV2N5680
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 38,406
- In Stock ：
- 38,406
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Contact Plating :
- Lead, Tin
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Factory Lead Time :
- 20 Weeks
- Transition Frequency :
- 30MHz
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Configuration :
- Single
- Mount :
- Through Hole
- Published :
- 2002
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Collector Emitter Voltage (VCEO) :
- 120V
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- PNP
- Series :
- Military, MIL-PRF-19500/582
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Datasheets
- JANTXV2N5680
JANTXV2N5680 Documents
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5680 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 250mA 2V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTXV2N5680 Applications
There are a lot of Microsemi Corporation
JANTXV2N5680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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