JANTXV2N5680
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- Mfr.Part #
- JANTXV2N5680
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 120V 1A TO39
- Stock
- 38,406
- In Stock ：
- 38,406
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2002
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 30MHz
- Number of Pins :
- 3
- Mount :
- Through Hole
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 120V
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Current - Collector Cutoff (Max) :
- 10μA
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Wire
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Lead, Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/582
- Collector Base Voltage (VCBO) :
- 120V
- Factory Lead Time :
- 20 Weeks
- Number of Elements :
- 1
- Configuration :
- Single
- Datasheets
- JANTXV2N5680
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5680 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 250mA 2V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 1A volts can be achieved.
JANTXV2N5680 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JANTXV2N5680 Applications
There are a lot of Microsemi Corporation
JANTXV2N5680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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