JANTXV2N5666S
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- Mfr.Part #
- JANTXV2N5666S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO39
- Stock
- 35,493
- In Stock ：
- 35,493
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.2W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 20 Weeks
- Terminal Form :
- PIN/PEG
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-5
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 5A
- Number of Terminations :
- 2
- Published :
- 2007
- Contact Plating :
- Lead, Tin
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 200V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Collector Base Voltage (VCBO) :
- 250V
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 200nA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Packaging :
- Bulk
- Pin Count :
- 2
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/455
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Number of Elements :
- 1
- Datasheets
- JANTXV2N5666S
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5666S Overview
DC current gain in this device equals 40 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation
JANTXV2N5666S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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