JANTXV2N5666
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- Mfr.Part #
- JANTXV2N5666
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO5
- Stock
- 22,579
- In Stock ：
- 22,579
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Terminal Form :
- PIN/PEG
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 2
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Configuration :
- Single
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Pbfree Code :
- No
- Mount :
- Through Hole
- Max Power Dissipation :
- 1.2W
- Max Collector Current :
- 5A
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 200nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 250V
- Published :
- 2007
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-5
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Lead, Tin
- Collector Emitter Voltage (VCEO) :
- 200V
- JESD-30 Code :
- O-MBFM-P2
- Series :
- Military, MIL-PRF-19500/455
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Factory Lead Time :
- 20 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 1.2W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JANTXV2N5666
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5666S Overview
DC current gain in this device equals 40 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation
JANTXV2N5666S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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