JANTXV2N5666
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- Mfr.Part #
- JANTXV2N5666
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 200V 5A TO5
- Stock
- 22,579
- In Stock ：
- 22,579
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- JEDEC-95 Code :
- TO-5
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 200V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Max Collector Current :
- 5A
- Operating Temperature :
- -65°C~200°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Terminal Form :
- PIN/PEG
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 20 Weeks
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Military, MIL-PRF-19500/455
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Power Dissipation :
- 1.2W
- Qualification Status :
- Qualified
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Pin Count :
- 2
- Max Power Dissipation :
- 1.2W
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Base Voltage (VCBO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Lead, Tin
- Number of Terminations :
- 2
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector Cutoff (Max) :
- 200nA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5A, 1A
- Datasheets
- JANTXV2N5666
JANTXV2N5666 Documents
NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANTXV2N5666S Overview
DC current gain in this device equals 40 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5A, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.
JANTXV2N5666S Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V
JANTXV2N5666S Applications
There are a lot of Microsemi Corporation
JANTXV2N5666S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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