JANTXV2N5415P
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- Mfr.Part #
- JANTXV2N5415P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 43,563
- In Stock ：
- 43,563
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Current - Collector (Ic) (Max) :
- 1 A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Frequency - Transition :
- -
- Product Category :
- Bipolar Transistors - BJT
- Supplier Device Package :
- TO-5AA
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- Military, MIL-PRF-19500/485
- Transistor Type :
- PNP
- Subcategory :
- Transistors
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA, 10V
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Brand :
- Microchip / Microsemi
- Power - Max :
- 750 mW
- Manufacturer :
- Microchip
- Datasheets
- JANTXV2N5415P
PNP -65°C ~ 200°C (TJ) 1mA TO-205AA, TO-5-3 Metal Can Through Hole
JANTXV2N5415P Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA, 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-5AA contains the product.The device has a 200 V maximal voltage - Collector Emitter Breakdown.
JANTXV2N5415P Features
the DC current gain for this device is 30 @ 50mA, 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the supplier device package of TO-5AA
JANTXV2N5415P Applications
There are a lot of Microchip Technology
JANTXV2N5415P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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