JANTXV2N5153
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- Mfr.Part #
- JANTXV2N5153
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 80V 50UA TO39
- Stock
- 22,952
- In Stock ：
- 22,952
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 80V
- Turn On Time-Max (ton) :
- 500ns
- Series :
- Military, MIL-PRF-19500/545
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A 5V
- Pin Count :
- 3
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Published :
- 2007
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Transition Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5.5V
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Power Dissipation :
- 1W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Datasheets
- JANTXV2N5153
PNP -65°C~200°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANTXV2N5153L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.If the emitter base voltage is kept at 5.5V, a high level of efficiency can be achieved.A transition frequency of 70MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
JANTXV2N5153L Features
the DC current gain for this device is 70 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 70MHz
JANTXV2N5153L Applications
There are a lot of Microsemi Corporation
JANTXV2N5153L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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